STD7N60M2, STP7N60M2, STU7N60M2 Datasheet N-channel 600 V, 0.86 typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 Order codes V T R max. I DS Jmax DS(on) D 1 DPAK STD7N60M2 3 2 TO-220 TAB 1 STP7N60M2 650 V 0.95 5 A STU7N60M2 3 2 IPAK 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Product status link STD7N60M2 STP7N60M2 STU7N60M2 Product summary Order code STD7N60M2 Marking 7N60M2 Package DPAK Packing Tape and reel Order code STP7N60M2 Marking 7N60M2 Package TO-220 Packing Tube Order code STU7N60M2 Marking 7N60M2 Package IPAK Packing Tube DS9653 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7N60M2, STP7N60M2, STU7N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 case (1) I A D Drain current (continuous) at T = 100 C 3.5 case (2) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 60 W TOT case (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5 A, di/dt 400 A/s V < V , V =400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 100 C/W thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 1.5 A AR Jmax Single pulse avalanche energy E 99 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS9653 - Rev 2 page 2/26