X-On Electronics has gained recognition as a prominent supplier of STP7N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP7N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP7N60M2 STMicroelectronics

STP7N60M2 electronic component of STMicroelectronics
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Part No.STP7N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-CH 600V 0.86Ohm 5A MDmesh II
Datasheet: STP7N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.708 ea
Line Total: USD 1.71 
Availability - 54
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
54
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.708
10 : USD 1.148
18 : USD 0.9366
50 : USD 0.8848
500 : USD 0.854

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP7N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP7N60M2 and other electronic components in the MOSFETs category and beyond.

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STD7N60M2, STP7N60M2, STU7N60M2 Datasheet N-channel 600 V, 0.86 typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 Order codes V T R max. I DS Jmax DS(on) D 1 DPAK STD7N60M2 3 2 TO-220 TAB 1 STP7N60M2 650 V 0.95 5 A STU7N60M2 3 2 IPAK 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Product status link STD7N60M2 STP7N60M2 STU7N60M2 Product summary Order code STD7N60M2 Marking 7N60M2 Package DPAK Packing Tape and reel Order code STP7N60M2 Marking 7N60M2 Package TO-220 Packing Tube Order code STU7N60M2 Marking 7N60M2 Package IPAK Packing Tube DS9653 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7N60M2, STP7N60M2, STU7N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 case (1) I A D Drain current (continuous) at T = 100 C 3.5 case (2) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 60 W TOT case (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5 A, di/dt 400 A/s V < V , V =400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 100 C/W thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 1.5 A AR Jmax Single pulse avalanche energy E 99 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS9653 - Rev 2 page 2/26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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