STP7N65M2 STMicroelectronics

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB R DS(on) Order code V I DS D max STP7N65M2 650 V 1.15 5 A 3 2 STU7N65M2 650 V 1.15 5 A TAB 1 TO-220 Extremely low gate charge 3 2 Excellent output capacitance (C ) profile IPAK oss 1 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to the strip layout associated with an G(1) improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. S(3) AM01476v1 tab Table 1: Device summary Order code Marking Package Packaging STP7N65M2 7N65M2 TO-220 Tube STU7N65M2 7N65M2 IPAK Tube May 2015 DocID026788 Rev 3 1/18 www.st.com This is information on a product in full production. Contents STP7N65M2, STU7N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 IPAK(TO-251) type A package information ..................................... 13 4.3 IPAK (TO-251) type C package information .................................... 15 5 Revision history ............................................................................ 17 2/18 DocID026788 Rev 3