X-On Electronics has gained recognition as a prominent supplier of STP8NM50N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP8NM50N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP8NM50N STMicroelectronics

STP8NM50N electronic component of STMicroelectronics
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Part No.STP8NM50N
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 45W; TO220-3
Datasheet: STP8NM50N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.176 ea
Line Total: USD 1.18 
Availability - 108
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
108
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.176
3 : USD 1.022
10 : USD 0.9128
22 : USD 0.791
50 : USD 0.7896

2199
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14
Multiples : 1
14 : USD 1.1219
50 : USD 1.1107
100 : USD 0.953
500 : USD 0.9204
1000 : USD 0.9064
2000 : USD 0.8543
5000 : USD 0.8458

   
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP8NM50N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP8NM50N and other electronic components in the MOSFETs category and beyond.

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STD8NM50N, STP8NM50N Datasheet N-channel 500 V, 0.73 typ., 5 A, MDmesh II Power MOSFETs in DPAK and TO-220 packages Features V T R max. I Order codes DS Jmax DS(on) D TAB TAB STD8NM50N 550 V 0.79 5 A 2 3 STP8NM50N 1 3 2 100% avalanche tested DPAK TO-220 1 Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds S(3) lowest on-resistance and gate charge. They are therefore suitable for the most AM01475v1 noZen demanding high-efficiency converters. Product status links STD8NM50N STP8NM50N Product summary Order code STD8NM50N Marking 8NM50N Package DPAK Packing Tape and reel Order code STP8NM50N Marking 8NM50N Package TO-220 Packing Tube DS6808 - Rev 7 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD8NM50N, STP8NM50N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 DS V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 case I A D Drain current (continuous) at T = 100 C 3 case (1) I Drain current (pulsed) 20 A DM P Total dissipation at T = 25 C 45 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature 2. I 5 A, di/dt 400 A/s, V V , V = 80% V SD DS(Peak) (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance junction-case 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 2 A AR Jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 140 mJ AS j D AR DD DS6808 - Rev 7 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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