STP9N80K5 STMicroelectronics

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP9N80K5 800 V 0.90 7 A STW9N80K5 3 3 Industrys lowest RDS(on) x area 2 2 1 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested TO-247 TO-220 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP9N80K5 TO-220 9N80K5 Tube STW9N80K5 TO-247 July 2016 DocID028461 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STP9N80K5, STW9N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028461 Rev 3