X-On Electronics has gained recognition as a prominent supplier of STP9NK70ZFP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP9NK70ZFP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP9NK70ZFP STMicroelectronics

STP9NK70ZFP electronic component of STMicroelectronics
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Part No.STP9NK70ZFP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP
Datasheet: STP9NK70ZFP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.934 ea
Line Total: USD 3.93 
Availability - 14
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.934
10 : USD 2.296
13 : USD 1.288
36 : USD 1.218

   
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Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP9NK70ZFP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP9NK70ZFP and other electronic components in the MOSFETs category and beyond.

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STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z 2 2 N-CHANNEL 700V - 1 - 7.5A TO-220/FP/D PAK/I PAK/TO-247 Zener-Protected SuperMESHPower MOSFET TYPE V R I Pw DSS DS(on) D STP9NK70Z 700 V < 1.2 7.5 A 115 W STP9NK70ZFP 700 V < 1.2 7.5 A 35 W STB9NK70Z 700 V < 1.2 7.5 A 115 W STB9NK70Z-1 700 V < 1.2 7.5 A 115 W 3 STW9NK70Z 700 V < 1.2 7.5 A 156 W 2 1 3 2 TYPICAL R (on) = 1.0 DS TO-220 1 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY TO-247 IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES 1 3 2 1 VERY GOOD MANUFACTURING 2 2 I PAK D PAK REPEATIBILITY DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE TUBE 2 STB9NK70Z B9NK70Z D PAK (ONLY UNDER REQUEST) 2 STB9NK70ZT4 B9NK70Z TAPE & REEL D PAK 2 STB9NK70Z-1 B9NK70Z-1 TUBE I PAK STW9NK60Z W9NK70Z TO-247 TUBE April 2002 1/14STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TO-220 / TO-220FP TO-247 2 2 D PAK / I PAK V Drain-source Voltage (V = 0) 700 V DS GS V Drain-gate Voltage (R = 20 k) 700 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 7.5 7.5 (*) 7.5 A D C I Drain Current (continuous) at T = 100C 4.7 4.7 (*) 4.7 A D C I (l) Drain Current (pulsed) 30 30 (*) 30 A DM P Total Dissipation at T = 25C 115 35 156 W TOT C Derating Factor 0.92 0.28 1.25 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 4000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 V ISO T Operating Junction Temperature C j -55 to 150 T Storage Temperature -55 to 150 C stg ( l) Pulse width limited by safe operating area (1) I 7.5A, di/dt 200 A, V V , T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 2 TO-220FP TO-247 D PAK 2 I PAK Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 C/W Thermal Resistance Junction-pcb Max Rthj-pcb 30 C/W (When mounted on minimum Footprint) Rthj-amb Thermal Resistance Junction-ambient Max 62.5 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 7.5 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 230 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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