STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.84 , DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET Features V R DSS DS(on) Order codes I D T max. 3 Jmax 2 3 2 1 1 STD7NM60N IPAK TO-220 STF7NM60N 650 V < 0.9 5 A STP7NM60N STU7NM60N 3 100% avalanche tested 1 3 2 1 Low input capacitance and gate charge DPAK TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation of TM MDmesh technology. It applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. 3 - V Table 1. Device summary Order codes Marking Package Packaging STD7NM60N DPAK Tape and reel STF7NM60N TO-220FP Tube 7NM60N STP7NM60N TO-220 Tube STU7NM60N IPAK Tube November 2010 Doc ID 16472 Rev 4 1/17 www.st.com 17 Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17 Doc ID 16472 Rev 4