STP6NM60N STMicroelectronics

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET 2 TO-220, TO-220FP, IPAK, DPAK, D PAK Features V R DSS DS(on) Type I D ( Tjmax) max 3 STB6NM60N 650 V < 0.92 4.6 A 3 2 2 1 1 STD6NM60N 650 V < 0.92 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 4.6 A 3 1 (1) STF6NM60N 650 V < 0.92 4.6 A DPAK STP6NM60N 650 V < 0.92 4.6 A 3 3 1 2 1 1. Limited only by maximum temperature allowed DPAK IPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This series of devices implements second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics strip layout to yield one of the worlds lowest on- 3 resistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters. - V Table 1. Device summary Order codes Marking Package Packaging STB6NM60N B6NM60N DPAK Tape and reel STD6NM60N-1 D6NM60N IPAK Tube STD6NM60N D6NM60N DPAK Tape and reel STF6NM60N F6NM60N TO-220FP Tube STP6NM60N P6NM60N TO-220 Tube January 2009 Rev 3 1/19 www.st.com 19 Obsolete Product(s) - Obsolete Product(s)Contents STx6NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 Obsolete Product(s) - Obsolete Product(s)