STP6N52K3 STMicroelectronics

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features R DS(on) 3 Order codes V I Pw DSS D max 1 3 STB6N52K3 5 A 70 W 2 DPAK 1 (1) STD6N52K3 5 A 25 W TO-220FP 525 V < 1.2 STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 100% avalanche tested 2 1 1 DPAK TO-220 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics D(2) Zener-protected Application Switching applications G(1) Description These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to S(3) STMicroelectronics SuperMESH technology AM01476v1 combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB6N52K3 DPAK Tape and reel STD6N52K3 DPAK 6N52K3 STF6N52K3 TO-220FP Tube STP6N52K3 TO-220 March 2011 Doc ID 14994 Rev 2 1/22 www.st.com 22Contents STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 21 2/22 Doc ID 14994 Rev 2