X-On Electronics has gained recognition as a prominent supplier of STP5N62K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP5N62K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP5N62K3 STMicroelectronics

STP5N62K3 electronic component of STMicroelectronics
STP5N62K3 STMicroelectronics
STP5N62K3 MOSFETs
STP5N62K3  Semiconductors

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See Product Specifications
Part No. STP5N62K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
Datasheet: STP5N62K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 0.5643
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MOQ : 50
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50 : USD 0.759
100 : USD 0.6854
250 : USD 0.6004
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MOQ : 1
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1 : USD 0.4524
10 : USD 0.4409
30 : USD 0.4351
100 : USD 0.4275
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MOQ : 2000
Multiples : 2000
2000 : USD 0.4754
10000 : USD 0.468
25000 : USD 0.4533
50000 : USD 0.4397
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MOQ : 13
Multiples : 1
13 : USD 0.5643
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MOQ : 13
Multiples : 13
13 : USD 0.5578
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MOQ : 13
Multiples : 13
13 : USD 0.5578
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
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Qg - Gate Charge
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Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Cnhts
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We are delighted to provide the STP5N62K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP5N62K3 and other electronic components in the MOSFETs category and beyond.

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STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 Datasheet N-channel 620 V, 1.28 typ., 4.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features TAB 3 2 V R max. I Order code Package DS DS(on) D 1 DPAK 3 2 STD5N62K3 DPAK 1 TO-220FP STF5N62K3 TO-220FP 620 V 1.6 4.2 A TAB STP5N62K3 TO-220 TAB STU5N62K3 IPAK 3 2 1 3 2 100% avalanche tested IPAK 1 TO-220 Extremely high dv/dt capability Very low intrinsic capacitance D(2, TAB) Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most Product status link demanding applications. STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 DS6792 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N62K3, STF5N62K3, STP5N62K3, STU5N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220, TO-220FP IPAK V Drain-source voltage 620 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.2 A D C 4.2 (1) I Drain current (continuous) at T = 100 C 3 A D C 3 (2) (1) I Drain current (pulsed) 16.8 16.8 A DM P Total dissipation at T = 25 C 70 25 W TOT C (3) Peak diode recovery voltage slope 12 V/ns dv/dt (3) di/dt Diode reverse recovery current slope 400 A/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.2 A, V V , V = 80% V . SD DSpeak (BR)SS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK TO-220FP R Thermal resistance junction-case 1.79 5 C/W thj-case R Thermal resistance junction-ambient 62.5 100 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 4.2 A AR (2) E Single pulse avalanche energy 120 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS6792 - Rev 3 page 2/27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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