STP5NK60Z STMicroelectronics

STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Datasheet N-channel 600 V, 1.2 typ., 5 A SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packages Features TAB 3 2 1 DPAK V DS R max. Order codes Package TAB DS(on) T jmax. STD5NK60ZT4 DPAK 3 3 2 2 1 1 STP5NK60Z 650 V 1.6 TO-220 TO-220 TO-220FP STP5NK60ZFP TO-220FP D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK60ZT4 STP5NK60Z STP5NK60ZFP DS2857 - Rev 8 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK,TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 5 5 A D C (1) I Drain current (continuous) at T = 100 C 3.16 3.16 A D C (2) (1) I Drain current (pulsed) 20 20 A DM P Total dissipation at T = 25 C 90 25 W TOT C Gate-source human body model ESD 3 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.39 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 5 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 220 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2857 - Rev 8 page 2/24