X-On Electronics has gained recognition as a prominent supplier of STP5NK60Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP5NK60Z MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP5NK60Z STMicroelectronics

STP5NK60Z electronic component of STMicroelectronics
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Part No.STP5NK60Z
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 600 Volt 5 Amp
Datasheet: STP5NK60Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 0.895 ea
Line Total: USD 8.06 
Availability - 238
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 9  Multiples: 1
Pack Size: 1
Availability Price Quantity
238
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 9
Multiples : 1
9 : USD 0.895

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
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Rise Time
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We are delighted to provide the STP5NK60Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP5NK60Z and other electronic components in the MOSFETs category and beyond.

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STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Datasheet N-channel 600 V, 1.2 typ., 5 A SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packages Features TAB 3 2 1 DPAK V DS R max. Order codes Package TAB DS(on) T jmax. STD5NK60ZT4 DPAK 3 3 2 2 1 1 STP5NK60Z 650 V 1.6 TO-220 TO-220 TO-220FP STP5NK60ZFP TO-220FP D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK60ZT4 STP5NK60Z STP5NK60ZFP DS2857 - Rev 8 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK,TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 5 5 A D C (1) I Drain current (continuous) at T = 100 C 3.16 3.16 A D C (2) (1) I Drain current (pulsed) 20 20 A DM P Total dissipation at T = 25 C 90 25 W TOT C Gate-source human body model ESD 3 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.39 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 5 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 220 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2857 - Rev 8 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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