STP60N3LH5 STMicroelectronics

STD60N3LH5 N-channel 30 V, 0.0072 typ., 48 A STripFET V Power MOSFET in a DPAK package Datasheet - not recommended for new design Features Order code V R max I DS Tjmax DS(on) D STD60N3LH5 35 V 0.008 48 A TAB R * Q industry benchmark DS(on) g 3 Extremely low on-resistance R DS(on) 1 Very low switching gate charge DPAK High avalanche ruggedness Low gate drive power losses Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, * contributing to a FOM that is among the best in its class. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel August 2013 DocID14079 Rev 5 1/19 This is information on a product in full production. This is information on a product still in production but not recommended www.st.com for new designs. Contents STD60N3LH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 14 2/19 DocID14079 Rev 5