STP40N65M2 STMicroelectronics

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TAB Order code V R max. I DS DS(on) D STI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 2 3 1 2 Excellent output capacitance (C ) profile OSS 1 IPAK TO-220 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance G(1) and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. S(3) AM15572v1 tab Table 1: Device summary Order code Marking Package Packaging STI40N65M2 IPAK 40N65M2 Tube STP40N65M2 TO-220 February 2015 DocID027478 Rev 1 1/14 www.st.com This is information on a product in full production. Contents STI40N65M2, STP40N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK package information ............................................................... 9 4.2 TO-220 type A package information ................................................ 11 5 Revision history ............................................................................ 13 2/14 DocID027478 Rev 1