STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Datasheet N-channel 900 V, 3.6 typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages Features TAB 2 3 Order code V R max. I Package DS DS(on) D 1 DPAK STD3NK90ZT4 DPAK TAB STP3NK90Z 900 V 4.8 3 A TO-220 STP3NK90ZFP TO-220FP 3 3 2 2 1 1 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested D(2, TAB) Gate charge minimized Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK90ZT4 STP3NK90Z STP3NK90ZFP DS2980 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Drain-source voltage 900 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 3 3 A D C (1) I Drain current (continuous) at T = 100 C 1.89 1.89 A D C (2) (1) I Drain current (pulsed) 12 12 A DM P Total dissipation at T = 25 C 90 25 W TOT C Gate-source human body model ESD 4 kV (R = 1,5 k, C = 100 pF) (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 3 A, di/dt 200 A/s, V V , V = 80% V . SD DS(peak) (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.38 5 thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 3 A AR (2) E Single pulse avalanche energy 180 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V. j D AR DD DS2980 - Rev 3 page 2/24