X-On Electronics has gained recognition as a prominent supplier of STP3N150 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP3N150 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP3N150 STMicroelectronics

STP3N150 electronic component of STMicroelectronics
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Part No.STP3N150
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Datasheet: STP3N150 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.8847 ea
Line Total: USD 2884.7 
Availability - 13580
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
26
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.95
4 : USD 4.76
10 : USD 4.508
50 : USD 4.494
100 : USD 4.34

13580
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.8847

1967
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 5.392
10 : USD 5.2902
25 : USD 3.5515
100 : USD 3.3293
500 : USD 2.8758

770
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6
Multiples : 1
6 : USD 7.28
10 : USD 7.1175
50 : USD 4.2088
100 : USD 3.8838
200 : USD 3.7212

   
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP3N150 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP3N150 and other electronic components in the MOSFETs category and beyond.

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STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs 2 in TO-3PF, H PAK-2, TO-220 and TO247 packages Features TAB V R max. I P Order codes DS DS(on) D TOT 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 2.5 A STP3N150 140 W TAB STW3N150 3 3 100% avalanche tested 2 2 1 1 TO-220 Intrinsic capacitances and Qg minimized TO-247 High speed switching Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) D(2, TAB) D(TAB) Applications Switching applications G(1) G(1) Description S(3) S(2, 3) 2 (TO-3PF, TO-220 and TO-247) (H PAK-2) These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or AM15557v1 improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 1. Value Symbol Parameter Unit 2 TO-3PF H PAK-2 TO-220 TO-247 V Drain-source voltage 1500 V DS V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 2.5 C 2.5 I A D (1) Drain current (continuous) at T = 100 C C 1.6 1.6 (2) I Drain current (pulsed) 10 A DM P Total power dissipation at T = 25 C 63 140 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C Derating factor 0.5 1.12 W/C T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Table 2. Thermal data Value Symbol Parameter Unit 2 TO-3PF TO-220 TO-247 H PAK-2 R Thermal resistance junction-case 2 0.89 C/W thj-case R Thermal resistance junction-ambient 50 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 35 C/W thj-pcb 2 1. When mounted on 1 inch FR-4 board, 2 oz Cu. Table 3. Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T max) J Single pulse avalanche energy E 450 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS5052 - Rev 12 page 2/22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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