X-On Electronics has gained recognition as a prominent supplier of STP3NK60Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP3NK60Z MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP3NK60Z STMicroelectronics

STP3NK60Z electronic component of STMicroelectronics
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Part No.STP3NK60Z
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3
Datasheet: STP3NK60Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.456 ea
Line Total: USD 1.46 
Availability - 88
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1872
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.7331

88
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.456
3 : USD 0.812
10 : USD 0.6566
31 : USD 0.5684
85 : USD 0.5376

970
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.7331

2910
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 20
Multiples : 1
20 : USD 0.9849
100 : USD 0.8886
500 : USD 0.7816
1000 : USD 0.7731

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP3NK60Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP3NK60Z and other electronic components in the MOSFETs category and beyond.

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packages Features TAB TAB 3 Order codes V R max. I Package DS DS(on) D 2 3 1 1 2 D PAK IPAK 2 TAB STB3NK60ZT4 D PAK 2 3 TAB 1 STD3NK60Z-1 IPAK DPAK STD3NK60ZT4 600 V 3.6 2.4 A DPAK 3 STP3NK60Z TO-220 3 2 2 1 1 STP3NK60ZFP TO-220FP TO-220 TO-220FP Extremely high dv/dt capability D(2, TAB) 100% avalanche tested Gate charge minimized Very low intrinsic capacitance G(1) Zener-protected Applications S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an Product status link optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt STB3NK60ZT4 capability for the most demanding applications. STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP DS2912 - Rev 6 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP DPAK, IPAK V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.4 2.4 2.4 A D C (1) I Drain current (continuous) at T = 100 C 1.51 1.51 1.51 A D C (2) (1) I Drain current (pulsed) 9.6 9.6 9.6 A DM P Total dissipation at T = 25 C 45 20 45 W TOT C Gate-source human body model ESD 2.1 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) V 2.5 kV ISO from all three leads to external heat-sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.4 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP DPAK IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case Thermal resistance junction- R 62.5 100 C/W thj-amb ambient (1) R Thermal resistance junction-pcb 35 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not- I repetitive 2.4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 150 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2912 - Rev 6 page 2/34

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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