STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packages Features TAB TAB 3 Order codes V R max. I Package DS DS(on) D 2 3 1 1 2 D PAK IPAK 2 TAB STB3NK60ZT4 D PAK 2 3 TAB 1 STD3NK60Z-1 IPAK DPAK STD3NK60ZT4 600 V 3.6 2.4 A DPAK 3 STP3NK60Z TO-220 3 2 2 1 1 STP3NK60ZFP TO-220FP TO-220 TO-220FP Extremely high dv/dt capability D(2, TAB) 100% avalanche tested Gate charge minimized Very low intrinsic capacitance G(1) Zener-protected Applications S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an Product status link optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt STB3NK60ZT4 capability for the most demanding applications. STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP DS2912 - Rev 6 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP DPAK, IPAK V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.4 2.4 2.4 A D C (1) I Drain current (continuous) at T = 100 C 1.51 1.51 1.51 A D C (2) (1) I Drain current (pulsed) 9.6 9.6 9.6 A DM P Total dissipation at T = 25 C 45 20 45 W TOT C Gate-source human body model ESD 2.1 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) V 2.5 kV ISO from all three leads to external heat-sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.4 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP DPAK IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case Thermal resistance junction- R 62.5 100 C/W thj-amb ambient (1) R Thermal resistance junction-pcb 35 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not- I repetitive 2.4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 150 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2912 - Rev 6 page 2/34