X-On Electronics has gained recognition as a prominent supplier of STP36N55M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP36N55M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP36N55M5 STMicroelectronics

Name: STP36N55M5
Brand: STMicroelectronics
SKU: STP36N55M5_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STP36N55M5 electronic component of STMicroelectronics

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Part No.	STP36N55M5
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	N-Channel 550 V 33A (Tc) 190W (Tc) Through Hole TO-220
Datasheet:	STP36N55M5 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

46: USD 2.1553 ea
Line Total: USD 99.14

Availability - 183
Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ: 46 Multiples: 1
Pack Size: 1

STP36N55M5 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

5445

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 14
Multiples : 1

14 : USD 4.5422

38

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 1000
Multiples : 1000

1000 : USD 2.735

5445

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 14
Multiples : 1

14 : USD 4.5422

38

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 40
Multiples : 40

40 : USD 2.8444

183

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 46
Multiples : 1

46 : USD 2.1553
50 : USD 2.0731
100 : USD 2.0028

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

20.8 A 20.8 A

Vds - Drain-Source Breakdown Voltage

550 V 550 V

Rds On - Drain-Source Resistance

80 mOhms 80 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

5 V 5 V

Pd - Power Dissipation

190 W 190 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 TO - 220

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

25 V 25 V

Qg - Gate Charge

72 nC 72 nC

Tradename

Mdmesh Mdmesh

Configuration

Single Single

Series

Stp36n55m5 Stp36n55m5

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

20.8 A 20.8 A

Drain-Source Breakdown Voltage

550 V 550 V

Gate-Source Breakdown Voltage

25 V 25 V

Power Dissipation

190 W 190 W

Rds On

80 Mohms 80 Mohms

Gate Charge Qg

72 nC 72 nC

Factory Pack Quantity :

50 50

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

STP36N55M5 Alternative Parts

We are delighted to provide the STP36N55M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP36N55M5 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages Datasheet production data Features V R DSS DS(on) Order codes I D T max Jmax TAB STP36N55M5 600 V < 0.08 33 A STW36N55M5 3 3 Worldwide best R * area DS(on) 2 2 1 1 Higher V rating and high dv/dt capability DSS TO-220 TO-247 Excellent switching performance 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description 4 These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 3 based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. - V Table 1. Device summary Order codes Marking Package Packaging STP36N55M5 TO-220 36N55M5 Tube STW36N55M5 TO-247 October 2012 Doc ID 022902 Rev 2 1/15 This is information on a product in full production. www.st.com 15Contents STP36N55M5, STW36N55M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 022902 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
5445 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 14 Multiples : 1	14 : USD 4.5422

38 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 1000 Multiples : 1000	1000 : USD 2.735

5445 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 14 Multiples : 1	14 : USD 4.5422

38 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 40 Multiples : 40	40 : USD 2.8444

183 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 46 Multiples : 1	46 : USD 2.1553 50 : USD 2.0731 100 : USD 2.0028

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