STP3LN62K3 STMicroelectronics

STD3LN62K3, STF3LN62K3 STP3LN62K3, STU3LN62K3 N-channel 620 V, 2.5 , 2.5 A SuperMESH3 Power MOSFET DPAK, TO-220FP, TO-220, IPAK Features R 3 DS(on) 3 Order codes V I P 2 DSS D D 1 max 1 DPAK STD3LN62K3 2.5 A 45 W IPAK (1) STF3LN62K3 2.5 A 20 W 620 V < 3 STP3LN62K3 2.5 A 45 W STU3LN62K3 2.5 A 45 W 1. Limited by package 3 3 100% avalanche tested 2 2 1 1 Extremely high dv/dt capability TO-220 TO-220FP Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2) Application Switching applications Description G(1) These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. S(3) The resulting product has an extremely low on AM01476v1 resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STD3LN62K3 DPAK Tape and reel STF3LN62K3 TO-220FP 3LN62K3 STP3LN62K3 TO-220 Tube STU3LN62K3 IPAK February 2011 Doc ID 18452 Rev 1 1/21 www.st.com 21Contents STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 18452 Rev 1