STP30NM50N STMicroelectronics

STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFET 2 2 D PAK, I PAK, TO-220FP, TO-220, TO-247 Features R V DS(on) DSS Type I D ( Tjmax) max 3 3 1 2 1 STB30NM50N 550 V < 0.115 27 A DPAK IPAK STI30NM50N 550 V < 0.115 27 A 3 2 (1) 1 STF30NM50N 550 V < 0.115 27 A TO-247 STP30NM50N 550 V < 0.115 27 A STW30NM50N 550 V < 0.115 27 A 3 1. Limited only by maximum temperature allowed 3 2 2 1 1 100% avalanche tested TO-220 TO-220FP Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This series of devices is designed using the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM50N 30NM50N DPAK Tape and reel STI30NM50N 30NM50N IPAK Tube STF30NM50N 30NM50N TO-220FP Tube STP30NM50N 30NM50N TO-220 Tube STW30NM50N 30NM50N TO-247 Tube September 2008 Rev 2 1/18 www.st.com 18 Obsolete Product(s) - Obsolete Product(s)Contents STB/I/F/P/W30NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data . 16 6 Revision history . 17 2/18 Obsolete Product(s) - Obsolete Product(s)