STP2NK60Z STMicroelectronics

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D STF2NK60Z 600 V < 8 1.4 A 20 STQ2NK60ZR-AP 600 V < 8 0.4 A 3 W STP2NK60Z 600 V < 8 1.4 A 45 W STD2NK60Z-1 600 V < 8 1.4 A 45 W 3 2 1 TYPICAL R (on) = 7.2 DS TO-92 (Ammopack) TO-220 EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 3 1 2 1 DESCRIPTION IPAK TO-220FP The SuperMESH series is obtained through an extreme optimization of STs well established Figure 2: Internal Schematic Diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS LOW POWER BATTERY CHARGERS SWITH MODE LOW POWER SUPPLIES(SMPS) LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number Marking Package Packaging STQ2NK60ZR-AP Q2NK60ZR TO-92 AMMOPAK STP2NK60Z P2NK60Z TO-220 TUBE STD2NK60Z-1 D2NK60Z IPAK TUBE STF2NK60Z F2NK60Z TO-220FP TUBE Rev. 5 September 2005 1/16STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit TO-220 / TO-92 TO-220FP IPAK V Drain-source Voltage (V = 0) 600 V DS GS V Drain-gate Voltage (R = 20 k ) 600 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 1.4 0.4 1.4 (*) A D C I Drain Current (continuous) at T = 100C 0.77 0.25 0.77 (*) A D C I ( ) Drain Current (pulsed) 5.6 1.6 5.6 (*) A DM P Total Dissipation at T = 25C 45 3 20 W TOT C Derating Factor 0.36 0.025 0.16 W/C V Gate source ESD (HBM-C= 100pF, R=1.5k ) 1500 V ESD(G-S) V Insulation Withstand Voltage (DC) 2500 V ISO dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature j -55 to 150 C T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 1.4A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/IPAK TO-220FP TO-92 Unit Rthj-case Thermal Resistance Junction-case Max 2.77 6.25 -- C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 100 120 C/W Rthj-lead Thermal Resistance Junction-lead Max -- -- 40 C/W Maximum Lead Temperature For Soldering 300 260 C T l Purpose Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 1.4 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 90 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate source I = 1 mA (Open Drain) 30 V GSO gs Breakdown Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16