STP400N4F6 STMicroelectronics

STI400N4F6, STP400N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packages Datasheet preliminary data Features Order codes V R max I DSS DS(on) D TAB TAB STI400N4F6 (1) 40 V < 1.7 m 120 A STP400N4F6 1. Limited by package 3 Low gate charge 3 2 2 1 1 Very low on-resistance IPAK TO-220 High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram Description 4 These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging STI400N4F6 IPAK 400N4F6 Tube STP400N4F6 TO-220 August 2012 Doc ID 023434 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice. Contents STI400N4F6, STP400N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Package mechanical data . 6 4 Revision history . 10 2/11 Doc ID 023434 Rev 1