X-On Electronics has gained recognition as a prominent supplier of STP400N4F6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP400N4F6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP400N4F6 STMicroelectronics

STP400N4F6 electronic component of STMicroelectronics
STP400N4F6 STMicroelectronics
STP400N4F6 MOSFETs
STP400N4F6  Semiconductors

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See Product Specifications
Part No. STP400N4F6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-CH 40V 120A STripFET VI DeepGATE
Datasheet: STP400N4F6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.263
10 : USD 4.4181
100 : USD 3.8214
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.1063
10 : USD 3.6967
100 : USD 3.4644
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Obsolete
0
MOQ : 5
Multiples : 5
5 : USD 4.5619
25 : USD 4.1375
50 : USD 4.0432
100 : USD 3.9607
250 : USD 3.8664
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.0796
10 : USD 5.3546
25 : USD 5.1039
100 : USD 4.5124
500 : USD 3.8806
1000 : USD 3.4895
N/A

Obsolete
0
MOQ : 6
Multiples : 1
6 : USD 6.6185
10 : USD 5.612
N/A

Obsolete
0
MOQ : 8
Multiples : 1
8 : USD 5.7429
10 : USD 5.7226
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STP400N4F6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP400N4F6 and other electronic components in the MOSFETs category and beyond.

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STI400N4F6, STP400N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packages Datasheet preliminary data Features Order codes V R max I DSS DS(on) D TAB TAB STI400N4F6 (1) 40 V < 1.7 m 120 A STP400N4F6 1. Limited by package 3 Low gate charge 3 2 2 1 1 Very low on-resistance IPAK TO-220 High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram Description 4 These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging STI400N4F6 IPAK 400N4F6 Tube STP400N4F6 TO-220 August 2012 Doc ID 023434 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice. Contents STI400N4F6, STP400N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Package mechanical data . 6 4 Revision history . 10 2/11 Doc ID 023434 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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