STP52N25M5 STMicroelectronics

STP52N25M5 N-channel 250 V, 0.055 , 28 A, TO-220 TM MDmesh V Power MOSFET Features R DS(on) Type V I DSS D max STP52N25M5 250 V < 0.065 28 A Amongst the best R * area DS(on) 3 2 High dv/dt capability 1 Excellent switching performance TO-220 Easy to drive 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description This devices is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior 3 power density and outstanding efficiency. - V Table 1. Device summary Order code Marking Package Packaging STP52N25M5 52N25M5 TO-220 Tube July 2010 Doc ID 17776 Rev 1 1/12 www.st.com 12 Contents STP52N25M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 17776 Rev 1