STD5N60M2, STP5N60M2, STU5N60M2 Datasheet N-channel 600 V, 1.3 typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 V T R max. I Order code DS Jmax DS(on) D 1 DPAK STD5N60M2 3 2 TO-220 TAB 1 STP5N60M2 650 V 1.4 3.5 A STU5N60M2 3 2 IPAK 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected Applications G(1) Switching applications Description S(3) These devices are N-channel Power MOSFETs developed using the MDmesh M2 NG1D2TS3Z technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STD5N60M2 STP5N60M2 STU5N60M2 DS9958 - Rev 5 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N60M2, STP5N60M2, STU5N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 3.5 C I A D Drain current (continuous) at T = 100 C 2.2 C (1) I Drain current (pulsed) 14 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 3.5 A, di/dt 400 A/s V peak < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.8 thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 100 thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 0.5 A AR (2) E Single pulse avalanche energy 80 mJ AS 1. Pulse width limited by T jmax 2. Starting T = 25 C, I = I , V = 50 V j D AR DD DS9958 - Rev 5 page 2/27