X-On Electronics has gained recognition as a prominent supplier of STP5NK50ZFP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP5NK50ZFP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP5NK50ZFP STMicroelectronics

STP5NK50ZFP electronic component of STMicroelectronics
STP5NK50ZFP STMicroelectronics
STP5NK50ZFP MOSFETs
STP5NK50ZFP  Semiconductors

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See Product Specifications
Part No. STP5NK50ZFP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP
Datasheet: STP5NK50ZFP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.862 ea
Line Total: USD 1.86 
Availability - 154
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0733
10 : USD 1.9695
30 : USD 1.9086
100 : USD 1.8463
500 : USD 1.6178
1000 : USD 1.6044

154
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 1.862
10 : USD 1.4
23 : USD 0.756
63 : USD 0.714

   
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Transistor Polarity
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
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Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Id Max
On State Resistance @ Vgs 10V
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP5NK50ZFP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP5NK50ZFP and other electronic components in the MOSFETs category and beyond.

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STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 typ., 4.4 A SuperMESH Power MOSFETs in 2 I PAK, DPAK, TO220, TO220FP and IPAK packages Features TAB TAB V R max. I Order codes Package DS DS(on) D 3 TAB 3 2 2 2 1 1 2 STB5NK50Z-1 2 3 I PAK I PAK TO-220 1 DPAK STD5NK50ZT4 DPAK STP5NK50Z 500 V 1.5 4.4 A TO-220 TAB STP5NK50ZFP TO-220FP 3 2 3 1 2 1 STU5NK50Z IPAK TO-220FP IPAK 100% avalanche tested D(2, TAB) Gate charge minimized Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant Product status link reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z DS2834 - Rev 6 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 I PAK, DPAK, TO-220FP TO-220, IPAK V Drain-source voltage 500 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.4 4.4 A D C (1) I Drain current (continuous) at T = 100 C 2.7 2.7 A D C (2) (1) I Drain current (pulsed) 17.6 17.6 A DM P Total dissipation at T = 25 C 70 25 W TOT C Gate-source human body model ESD 3 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) V 2.5 kV ISO from all three leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.4 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 I PAK, TO-220FP DPAK IPAK TO-220 R Thermal resistance junction-case 1.78 5 1.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4.4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 130 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2834 - Rev 6 page 2/29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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