STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 typ., 4.4 A SuperMESH Power MOSFETs in 2 I PAK, DPAK, TO220, TO220FP and IPAK packages Features TAB TAB V R max. I Order codes Package DS DS(on) D 3 TAB 3 2 2 2 1 1 2 STB5NK50Z-1 2 3 I PAK I PAK TO-220 1 DPAK STD5NK50ZT4 DPAK STP5NK50Z 500 V 1.5 4.4 A TO-220 TAB STP5NK50ZFP TO-220FP 3 2 3 1 2 1 STU5NK50Z IPAK TO-220FP IPAK 100% avalanche tested D(2, TAB) Gate charge minimized Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant Product status link reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z DS2834 - Rev 6 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 I PAK, DPAK, TO-220FP TO-220, IPAK V Drain-source voltage 500 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.4 4.4 A D C (1) I Drain current (continuous) at T = 100 C 2.7 2.7 A D C (2) (1) I Drain current (pulsed) 17.6 17.6 A DM P Total dissipation at T = 25 C 70 25 W TOT C Gate-source human body model ESD 3 kV (R = 1.5 k, C = 100 pF) Insulation withstand voltage (RMS) V 2.5 kV ISO from all three leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.4 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 I PAK, TO-220FP DPAK IPAK TO-220 R Thermal resistance junction-case 1.78 5 1.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4.4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 130 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2834 - Rev 6 page 2/29