STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 , 4.4 A SuperMESH3 Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes V R max I P DSS DS(on) D w STB5N52K3 70 W 3 3 3 2 2 1 STD5N52K3 70 W 1 1 STF5N52K3 525 V < 1.5 4.4 A 25 W TO-220 TO-220FP DPAK STP5N52K3 70 W STU5N52K3 70 W 100% avalanche tested 3 3 2 Extremely high dv/dt capability 1 1 IPAK Gate charge minimized DPAK Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2) Application Switching applications G(1) Description These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics SuperMESH technology combined with a new optimized vertical structure. S(3) The resulting product has an extremely low on AM01476v1 resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB5N52K3 DPAK Tape and reel STD5N52K3 DPAK STF5N52K3 5N52K3 TO-220FP STP5N52K3 TO-220 Tube STU5N52K3 IPAK December 2010 Doc ID 16952 Rev 2 1/23 www.st.com 23 Contents STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Package mechanical data 19 6 Revision history . 22 2/23 Doc ID 16952 Rev 2