STP4N80K5 STMicroelectronics

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I P DS DS(on) D TOT 3 1 STD4N80K5 60 W 3 DPAK 2 STF4N80K5 20 W 1 800 V 2.5 3 A TO-220FP TAB STP4N80K5 60 W TAB STU4N80K5 Industrys lowest R x area DS(on) 3 3 2 2 1 Industrys best figure of merit (FoM) 1 IPAK TO-220 Ultra low gate charge 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected 7 % Applications Switching applications Description * These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate 6 charge for applications requiring superior power AM01476v1 density and high efficiency. Table 1. Device summary Order code Marking Packages Packaging STD4N80K5 DPAK Tape and reel STF4N80K5 TO-220FP 4N80K5 STP4N80K5 TO-220 Tube STU4N80K5 IPAK February 2015 DocID025105 Rev 3 1/23 This is information on a product in full production. www.st.comContents STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 4.1 DPAK(TO-252), package information .11 4.2 TO-220FP, package information 14 4.3 TO-220, package information 16 4.4 IPAK(TO-251), package information 18 5 Packaging mechanical data 20 6 Revision history . 22 2/23 DocID025105 Rev 3