STP8NK100Z STMicroelectronics

STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.60 - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH MOSFET General features V R I Type Pw DSS DS(on) D STF8NK100Z 1000 V <1.85 6.5 ANote 1 40 W STP8NK100Z 1000 V <1.85 6.5 A 160 W EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 2 1 1 100% AVALANCHE RATED TO-220 IMPROVED ESD CAPABILITY TO-220FP VERY LOW INTRINSIC CAPACITANCE Description Internal schematic diagram The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications HIGH CURRENT,SWITCHING APPLICATION IDEAL FOR OFF-LINE POWER SUPPLIES Order codes Sales Type Marking Package Packaging STF8NK100Z F8NK100Z TO-220FP TUBE STP8NK100Z P8NK100Z TO-220 TUBE Rev 1 November 2005 1/13 www.st.com 131 Electrical ratings STF8NK100Z - STP8NK100Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP V Drain-source Voltage (V =0) 1000 V DS GS V Drain-gate Voltage 1000 V DGR V Gate-Source Voltage 30 V GS I Note 1 Drain Current (continuous) at T = 25C 6.5 6.5 A D C I Drain Current (continuous) at T = 100C 4.3 4.3 A D C I Note 2 Drain Current (pulsed) 16 16 A DM P Total Dissipation at T = 25C 160 40 W TOT C Derating Factor 1.28 0.32 W/C V Gate source ESD (HBM-C=100pF, R=1.5K) 4000 V ESD(G-S) dv/dt Note 3 Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) -- 2500 V ISO T Operating Junction Temperature j -55 to 150 C T Storage Temperature stg Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 C/W Rthj-a Thermal Resistance Junction-ambient Max 62.5 C/W Maximum Lead Temperature For Soldering T 300 C l Purpose Table 3. Avalanche Characteristics Symbol Parameter Value Unit Avalanche Current, Repetitive or I 6.5 A AR Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy E 320 mJ AS (starting Tj= 25C, I =I , V =50V) D AR DD 2/13