STN1NK60Z, STQ1NK60ZR N-channel 600 V, 13 typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features V R I P Order codes DS DS(on)max D TOT 4 STN1NK60Z 3.3 W 600 V 15 0.3 A STQ1NK60ZR-AP 3 W 3 2 1 100% avalanche tested SOT-223 TO-92 (Ammopak) Extremely high dv/dt capability Gate charge minimized ESD improved capability Zener-protected Figure 1. Internal schematic diagram Applications D(2,4) Switching applications Description These devices are N-channel Zener-protected G(1) Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most S(3) AM01476v1 demanding applications. Table 1. Device summary Order codes Marking Package Packaging STN1NK60Z 1NK60Z SOT-223 Tape and reel STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak July 2014 DocID9509 Rev 14 1/18 This is information on a product in full production. www.st.comContents STN1NK60Z, STQ1NK60ZR Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 SOT-223, STN1NK60Z 11 4.2 TO-92 ammopack, STQ1NK60ZR-AP . 13 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID9509 Rev 14