US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 z Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U02 zApplications Switching z Packaging specifications z Inner circuit (5) (4) Package Taping Type Code TR Quantity (pcs) 3000 US5U2 2 1 (1)Gate (2)Source (3)Anode (1) (2) (3) (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous I 1.4 A D Drain current 1 Pulsed IDP 5.6 A Source current Continuous IS 0.6 A (Body diode) 1 Pulsed I 5.6 A SP 2 Power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board 20190527-Rev.C1/4 0.2Max.US5U2 Transistors <Di> Parameter Symbol Limits Unit Repetitive peak reverse voltage VRM 30 V Reverse voltage V 20 V R Forward current IF 0.5 A 1 Forward current surge peak IFSM 2.0 A 2 Power dissipation PD 0.5 W / ELEMENT Junction temperature Tj 150 C 1 60Hz 1cycle 2 Mounted on ceramic board <MOSFET and Di> Parameter Symbol Limits Unit 1 Total power dissipation P 1.0 W / TOTAL D Range of storage temperature Tstg 55 to +150 C 1 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 170 240 m I = 1.4A, V = 10V D GS Static drain-source on-state RDS (on) 250 350 m ID= 1.4A, VGS= 4.5V resistance 270 380 m ID= 1.4A, VGS= 4V Forward transfer admittance Y 1.0 SV = 10V, I = 1.4A fs DS D Input capacitance Ciss 70 pF VDS= 10V Output capacitance Coss 15 pF VGS=0V Reverse transfer capacitance C 12 pF f=1MHz rss Turn-on delay time td (on) 6 ns VDD 15V ID= 0.7A Rise time tr 6 ns VGS= 10V Turn-off delay time t 13 ns d (off) RL= 21 Fall time tf 8 ns RG=10 Total gate charge Qg 1.4 2.0 nC VDD 15V, VGS= 5V Gate-source charge Q 0.6 nC I = 1.4A gs D Gate-drain charge Qgd0.3 nC RL= 11, R G= 10 Pulsed <Body diode characteristics (source-drain)> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.6A, VGS=0V <Di> Parameter Symbol Min. Typ. Max. Unit Conditions 0.36 V IF= 0.1A Forward voltage VF 0.47 V IF 0.5A Reverse current IR 100 AV = 20V R 20190527-Rev.C2/4