X-On Electronics has gained recognition as a prominent supplier of STQ1NK80ZR-AP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STQ1NK80ZR-AP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STQ1NK80ZR-AP STMicroelectronics

STQ1NK80ZR-AP electronic component of STMicroelectronics
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Part No.STQ1NK80ZR-AP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 800 V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Datasheet: STQ1NK80ZR-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.3444 ea
Line Total: USD 1377.6 
Availability - 5820
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 4000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
5820
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 4000
Multiples : 2000
4000 : USD 0.3444

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the STQ1NK80ZR-AP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STQ1NK80ZR-AP and other electronic components in the MOSFETs category and beyond.

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STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D 2 STQ1NK80ZR-AP 800 V < 16 0.3 A 3 W STN1NK80Z 800 V < 16 0.25A 2.5 W 3 STD1NK80Z 800 V < 16 1.0 A 45 W 2 1 STD1NK80Z-1 800 V < 16 1.0 A 45 W TYPICAL R (on) = 13 SOT-223 DS TO-92 (Ammopack) EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 3 2 1 1 DESCRIPTION DPAK IPAK The SuperMESH series is obtained through an extreme optimization of STs well established Figure 2: Internal Schematic Diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STQ1NK80ZR-AP Q1NK80ZR TO-92 AMMOPAK STN1NK80Z N1NK80Z SOT-223 TAPE & REEL STD1NK80ZT4 D1NK80Z DPAK TAPE & REEL STD1NK80Z-1 D1NK80Z IPAK TUBE Rev. 3 January 2006 1/15STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit TO-92 SOT-223 DPAK/IPAK V Drain-source Voltage (V = 0) 800 V DS GS V Drain-gate Voltage (R = 20 k ) 800 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 0.3 0.25 1.0 A D C I Drain Current (continuous) at T = 100C 0.19 0.16 0.63 A D C I ( ) Drain Current (pulsed) 5 A DM P Total Dissipation at T = 25C 3 2.5 45 W TOT C Derating Factor 0.025 0.02 0.36 W /C V Gate source ESD (HBM-C= 100pF, R= 1.5K) 1000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature j -55 to 150 C Storage Temperature T stg ( ) Pulse width limited by safe operating area (1) I 1 A, di/dt 200 A/s, V 640 SD DD Table 4: Thermal Data TO-92 SOT-223 DPAK/IPAK Unit Rthj-case Thermal Resistance Junction-case Max -- -- 2.78 C/W Rthj-amb( ) Thermal Resistance Junction-ambient Max 120 50 100 C/W Rthj-lead Thermal Resistance Junction-lead Max 40 -- -- C/W T Maximum Lead Temperature For Soldering 260 -- 300 C l Purpose ( ) When mounted on 1inch F R-4 BOARD, 2 oz Cu Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 1 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 50 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open 30 V GSO Voltage Drain) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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