STPTIC-82G2C5 STMicroelectronics

STPTIC-82G2 Parascan tunable integrated capacitor Datasheet - production data Description The ST integrated tunable capacitor offers excellent RF performance, low power consumption and high linearity required in 7 6 adaptive RF tuning applications. The fundamental building block of PTIC is a tunable material called Parascan, which is a version of barium strontium titanate (BST) developed by Paratek microwave. PP SLWFK :/&63 BST capacitors are tunable capacitors intended for use in mobile phone application and dedicated to RF tunable applications. These tunable capacitors are controlled through an extended Features bias voltage ranging from 1 to 24 V. The implementation of BST tunable capacitor in High power capability mobile phones enables significant improvement 5:1 tuning range in terms of radiated performance making the performance almost insensitive to the external High linearity environment. High quality factor (Q) Low leakage current Figure 1. PTIC functional block diagram Compatible with high voltage control IC (STHVDAC series) & Available in wafer level chip scale package: WLCSP package 0.61 x 0.90 x 0.3 mm 5) 5) ECOPACK 2 compliant component Benefit RF tunable passive implementation in mobile phones to optimize antenna radiated %L DV performance Applications Cellular antenna open loop tunable matching network in multi-band GSM/WCDMA/LTE mobile phone Open loop tunable RF filters TM: Parascan is a trademark of Paratek Microwave Inc. July 2015 DocID028103 Rev 1 1/11 This is information on a product in full production. www.st.com 37,& 37,Electrical characteristics STPTIC-82G2 1 Electrical characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Rating Unit P Input peak power RF (CW mode)/all RF ports +40 dBm IN IN (1) V Human body model, JESD22-A114-B, all I/O Class 1B V ESD(HBM) V Machine model, JESD22-A115-A, all I/O 100 V ESD(MM) T Device temperature +125 device C T Storage temperature -55 to +150 stg V Bias voltage 25 V x 1. Class 1B defined as passing 500 V, but fails after exposure to 1000V ESD pulse. Table 2. Recommended operating conditions Rating Symbol Parameter Unit Min. Typ. Max. P RF input power +33 dBm IN F Operating frequency 700 2700 MHz OP T Device temperature +100 device C T Operating temperature -30 +85 OP V Bias voltage 1 24 V BIAS 2/11 DocID028103 Rev 1