STPSC8H065DLF STMicroelectronics

STPSC8H065DLF Datasheet 650 V power Schottky silicon carbide diode Features Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Low drop forward voltage Power efficient product ECOPACK2 compliant component Applications Switch mode power supply Boost PFC Bootstrap diode LLC clamping function High frequency inverter applications Description This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky Product status link construction, no recovery is shown at turn-off and ringing patterns are negligible. The STPSC8H065DLF minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC8H065DLF in PowerFLAT 8x8 HV, Product summary enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. Symbol Value I F(AV) 8 A V 650 V RRM V 1.38 V F(typ.) T 175 C j(max.) Product label DS12815 - Rev 2 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office. STPSC8H065DLF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to + 175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I Average forward current T = 135 C , DC 8 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 75 I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 69 A FSM p c 800 t = 10 s square, T = 25 C p c (1) I Repetitive peak forward current T = 135 C , T = 175 C, = 0.1 32 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit R Junction to case 1.7 2.5 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7 80 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 65 335 j T = 25 C - 1.38 1.55 j (2) I = 8 A V Forward voltage drop V F F T = 150 C - 1.60 1.95 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.00 x I + 0.119 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604 : Calculation of conduction losses in a power rectifier AN4021 : Calculation of reverse losses on a power diode DS12815 - Rev 2 page 2/12