IDD04SG60C rd TM 3 Generation thinQ SiC Schottky Diode Features Product Summary Revolutionary semiconductor material - Silicon Carbide V 600 V DC Switching behavior benchmark Q 4.5 nC C No reverse recovery / No forward recovery I T < 130 C 4 A Temperature independent switching behavior F C High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 20mA Optimized for high temperature operation Lowest Figure of Merit Q /I C F thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD04SG60C PG-TO252-3 D04G60C n.c. A C Maximum ratings Parameter Symbol Conditions Value Unit I T <130C Continuous forward current 4 A F C I T =25C, t =10ms 18 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10ms 13.5 C p I T =25C, t =10s Non-repetitive peak forward current 120 F,max C p 2 2 T =25C, t =10ms 1.8 i dt C p A s i t value T =150 C, t =10ms 0.93 C p Repetitive peak reverse voltage V T =25C 600 V RRM j V = 0.480 V Diode dv/dt ruggedness dv/ dt 50 V/ns R P T =25C Power dissipation 43 W tot C Operating and storage temperature T , T -55 ... 175 C j stg Soldering temperature, reflow T reflow MSL1 260 sold soldering (max) Rev. 2.4 page 1 2013-02-11IDD04SG60C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.5 K/W thJC SMD version, device R on PCB, minimal - - 75 thJA footprint Thermal resistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 50 - 5) area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05 mA, T =25 C DC blocking voltage 600 - - V DC R j Diode forward voltage V I =4A, T =25C - 2.1 2.3 F F j I =4A, T =150C - 2.8 - F j I V =600V, T =25C Reverse current - 0.3 25 A R R j V =600V, T =150C - 1.3 270 R j AC characteristics V =400V,I I , R F F,max Total capacitive charge Q - 4.5 - nC c di /dt =200A/s, F 3) t - - <10 ns Switching time c T =150C j V =1V, f =1MHz Total capacitance C - 80 - pF R V =300V, f =1MHz - 10 - R V =600V, f =1MHz - 10 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Under worst case Z conditions. th 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air 6) Only capacitive charge occuring, guaranteed by design. Rev. 2.4 page 2 2013-02-11