PMEG2002AESFBYL Nexperia

PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 17 August 2017 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603B-2 (SOD962B) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current I 0.2 A F(AV) Reverse voltage V 20 V R Low forward voltage Low leakage current Ultra small and leadless SMD package Package height typ. 0.2 mm 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application Smartcard-embedded applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 125 C - - 0.2 A F(AV) sp current square wave V reverse voltage T = 25 C - - 20 V R j V forward voltage I = 200 mA T = 25 C pulsed 1 - 375 420 mV F F j I reverse current V = 10 V T = 25 C pulsed 1 - 5 25 A R R j V = 20 V T = 25 C pulsed 1 - 10 45 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym001 Transparent top view DSN0603B-2 (SOD962B) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG2002AESFB DSN0603B-2 silicon, leadless ultra small package 2 terminals 0.4 mm pitch SOD962B 0.6 x 0.3 x 0.2 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG2002AESFB A PMEG2002AESFB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 17 August 2017 2 / 13