X-On Electronics has gained recognition as a prominent supplier of STPSC6H12B-TR1 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC6H12B-TR1 Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC6H12B-TR1 STMicroelectronics

STPSC6H12B-TR1 electronic component of STMicroelectronics
STPSC6H12B-TR1 STMicroelectronics
STPSC6H12B-TR1 Schottky Diodes & Rectifiers
STPSC6H12B-TR1  Semiconductors

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See Product Specifications
Part No. STPSC6H12B-TR1
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V 6A Schottky 1.55V Vf 30pF 29nC
Datasheet: STPSC6H12B-TR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 2.1062 ea
Line Total: USD 5265.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2500
Multiples : 2500
2500 : USD 4.4393

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 7.1252
10 : USD 6.1713
100 : USD 5.0562
500 : USD 4.3042
1000 : USD 4.2807

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 7.1252
10 : USD 6.1713
100 : USD 5.0562
500 : USD 4.3042
1000 : USD 4.2807

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2500
Multiples : 2500
2500 : USD 2.1062

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 5.1841
10 : USD 3.3993

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC6H12B-TR1 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC6H12B-TR1 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description ST s 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic . inverters or in applications where negligible . switching losses are required. The STPSC6H12 helps to increase the application efficiency yield by up to 2% thanks to its ability to work at high frequency whatever the temperature. The central lead of the DPAK package is removed . to meet the IEC60664 and UL 840 standard requirements for a higher voltage +9 / 3 These characteristics make it the best-in-class 1200 V diode. Table 1. Device summary Features Symbol Value High frequency free-wheel / boost diode I 6 A F(AV) Robust high-voltage periphery V 1200 V RRM Ultrafast high voltage switching independent of T (max.) 175 C j temperature V (6 A, 25 C) typ. 1.55 V F C (300 V) typ. 30 pF j September 2016 DocID024631 Rev 5 1/8 This is information on a product in full production. www.st.com 8Characteristics STPSC6H12 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I Forward rms current 11 A F(RMS) I Average forward current T = 125 C, = 0.5, DC 6 A F(AV) c t = 10 ms sinusoidal, T = 25 C 36 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 150 C 30 A FSM p c current t = 10 s square, T = 25 C 100 p c I Repetitive peak forward current = 0.1, T = 125 C 28 A FRM c T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Typ. Max. Unit R Junction to case 1.3 1.9 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -100 400 A j Reverse leakage (1) I V = V R R RRM current T = 150 C - 0.65 1.5 mA j T = 25 C -1.55 1.9 j (2) V Forward voltage drop I = 6 A V F F T = 150 C - 2.05 2.6 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.89 x I + 0.285 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 800 V 29 nC cj R V = 0 V, T = 25 C, F = 1 MHz 330 R c C Total capacitance pF j V = 300 V, T = 25 C, F = 1 MHz 30 R c 9 287 1. Most accurate value for the capacitive charge: 4 F Y GY FM M 5 5 2/8 DocID024631 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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