STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description ST s 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic . inverters or in applications where negligible . switching losses are required. The STPSC6H12 helps to increase the application efficiency yield by up to 2% thanks to its ability to work at high frequency whatever the temperature. The central lead of the DPAK package is removed . to meet the IEC60664 and UL 840 standard requirements for a higher voltage +9 / 3 These characteristics make it the best-in-class 1200 V diode. Table 1. Device summary Features Symbol Value High frequency free-wheel / boost diode I 6 A F(AV) Robust high-voltage periphery V 1200 V RRM Ultrafast high voltage switching independent of T (max.) 175 C j temperature V (6 A, 25 C) typ. 1.55 V F C (300 V) typ. 30 pF j September 2016 DocID024631 Rev 5 1/8 This is information on a product in full production. www.st.com 8Characteristics STPSC6H12 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I Forward rms current 11 A F(RMS) I Average forward current T = 125 C, = 0.5, DC 6 A F(AV) c t = 10 ms sinusoidal, T = 25 C 36 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 150 C 30 A FSM p c current t = 10 s square, T = 25 C 100 p c I Repetitive peak forward current = 0.1, T = 125 C 28 A FRM c T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Typ. Max. Unit R Junction to case 1.3 1.9 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -100 400 A j Reverse leakage (1) I V = V R R RRM current T = 150 C - 0.65 1.5 mA j T = 25 C -1.55 1.9 j (2) V Forward voltage drop I = 6 A V F F T = 150 C - 2.05 2.6 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.89 x I + 0.285 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 800 V 29 nC cj R V = 0 V, T = 25 C, F = 1 MHz 330 R c C Total capacitance pF j V = 300 V, T = 25 C, F = 1 MHz 30 R c 9 287 1. Most accurate value for the capacitive charge: 4 F Y GY FM M 5 5 2/8 DocID024631 Rev 5