X-On Electronics has gained recognition as a prominent supplier of STPSC8065D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC8065D Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC8065D STMicroelectronics

STPSC8065D electronic component of STMicroelectronics
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Part No.STPSC8065D
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
Datasheet: STPSC8065D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0867 ea
Line Total: USD 0.09 
Availability - 1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6044
50 : USD 1.5928
100 : USD 1.5272
500 : USD 1.4078
1000 : USD 1.3463
2000 : USD 1.3398

1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0867

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC8065D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC8065D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC8065 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during Features transient phases. No or negligible reverse recovery Table 1: Device summary Switching behavior independent of Symbol Value temperature Dedicated to PFC applications IF(AV) 8 A High forward surge capability VRRM 650 V Operating Tj from -40 C to 175 C Tj (max.) 175 C ECOPACK2 compliant component V (typ.) 1.30 V F July 2017 DocID030730 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics STPSC8065 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V I Forward rms current 22 A F(RMS) (1) I Average forward current TC = 150 C , DC current 8 A F(AV) Repetitive peak forward I Tc = 150 C, Tj = 175 C, = 0.1 36 A FRM current tp = 10 ms sinusoidal, Tc = 25 C 46 Surge non repetitive forward I tp = 10 ms sinusoidal, Tc = 125 C 38 A FSM current tp = 10 s square, Tc = 25 C 200 T Storage temperature range -65 to +175 C stg (2) Tj Operating junction temperature -40 to +175 C Notes: (1) Value based on R max. th(j-c) (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Value Symbol Parameter Unit Typ. Max. Rth(j-c) Junction to case 1.1 1.65 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 2 105 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 20 750 j Tj = 25 C - 1.30 1.45 (2) V Forward voltage drop T = 150 C I = 8 A - 1.45 1.65 V F j F Tj = 175 C - 1.50 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.95 x IF(AV) + 0.087 x IF (RMS) 2/9 DocID030730 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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