Gen-III 50A - 1200V SiC Schottky Diode UJ3D1250K . Datasheet . Description CASE rd United Silicon Carbide, Inc. offers the 3 generation of high 2(CASE) performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 3 1 2 3 Part Number Package Marking UJ3D1250K TO-247-3L UJ3D1250K Features Typical Applications 175C maximum operating junction temperature w w Power converters w Easy paralleling w Industrial motor drives w Extremely fast switching not dependent on temperature w Switching-mode power supplies w No reverse or forward recovery w Power factor correction modules Enhanced surge current capability, MPS structure w 100% UIS tested w w AEC-Q101 qualified Maximum Ratings Parameter Symbol Test Conditions Value Units DC blocking voltage V 1200 V R Repetitive peak reverse voltage, T =25C V 1200 V j RRM Surge peak reverse voltage V 1200 V RSM T = 112C Maximum DC forward current I 50 A C F Non-repetitive forward surge current T = 25C, t = 10ms I 275 A C p FSM sine halfwave T = 25C, t = 10ms 163.5 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 99.6 C p T = 25C, t =10ms 2400 C p Non-repetitive peak forward current I A F,max T = 110C, t =10ms 2400 C p 2 2 2 T = 25C, t =10ms 378 i t value i dt C p A s T = 25C 319 C Power dissipation P W Tot T = 112C 134 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. B, January 2018 1 For more information go to www.unitedsic.com. Gen-III 50A - 1200V SiC Schottky Diode UJ3D1250K . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I = 50A, T = 25C - 1.5 1.7 F J V Forward voltage I = 50A, T =150C V F - 1.95 2.4 F J I = 50A, T =175C - 2.2 2.7 F J V =1200V, T =25C - 500 1250 R j Reverse current I mA R V =1200V, T =175C - 3500 R J (1) Q V =800V Total capacitive charge 240 nC C R V =1V, f=1MHz 2340 R V =400V, f=1MHz Total capacitance C 224 pF R V =800V, f=1MHz 198 R Capacitance stored energy E V =800V 72 mJ C R (1) Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance, junction - case R 0.36 0.47 C/W qJC Typical Performance 100 250 - 55C 90 25C 80 200 100C 150C 70 175C 60 150 50 - 55C 40 100 25C 30 100C 20 50 150C 175C 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 Forward Voltage, V (V) Forward Voltage, V (V) F F Figure 1 Typical forward characteristics Figure 2 Typical forward characteristics in surge current Rev. B, January 2018 2 For more information go to www.unitedsic.com. Forward Current, I (A) F Forward Current, I (A) F