IDH08SG60C rd TM 3 Generation thinQ SiC Schottky Diode Features Product Summary Revolutionary semiconductor material - Silicon Carbide V 600 V DC Switching behavior benchmark Q 12 nC C No reverse recovery / No forward recovery I T < 130 C 8 A Temperature independent switching behavior F C High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 20mA Optimized for high temperature operation Lowest Figure of Merit Q /I C F thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 IDH08SG60C PG-TO220-2 D08G60C C A Maximum ratings Parameter Symbol Conditions Value Unit I T <130C Continuous forward current 8 A F C I T =25C, t =10ms 42 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10ms 36 C p I T =25C, t =10s Non-repetitive peak forward current 350 F,max C p 2 2 T =25C, t =10ms 9 i dt C p A s i t value T =150 C, t =10ms 6.5 C p Repetitive peak reverse voltage V T =25C 600 V RRM j V = 0.480 V Diode dv/dt ruggedness dv/ dt 50 V/ns R P T =25C Power dissipation 100 W tot C Operating and storage temperature T , T -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 sold wavesoldering only allowed at leads from case for 10s Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.4 page 1 2012-12-12IDH08SG60C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.5 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, - - 62 thJA junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05 mA, T =25 C DC blocking voltage 600 - - V DC R j Diode forward voltage V I =8A, T =25C - 1.8 2.1 F F j I =8A, T =150C - 2.2 - F j I V =600V, T =25C Reverse current - 0.6 70 A R R j V =600V, T =150C - 2.5 700 R j AC characteristics V =400V,I I , R F F,max Total capacitive charge Q - 12 - nC c di /dt =200A/s, F 3) t - - <10 ns Switching time c T =150C j V =1V, f =1MHz Total capacitance C - 240 - pF R V =300V, f =1MHz - 30 - R V =600V, f =1MHz - 30 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Under worst case Z conditions. th 5) Only capacitive charge occuring, guaranteed by design. Rev. 2.4 page 2 2012-12-12