70m W - 1200V SiC Normally-On JFET UJ3N120070K3S Datasheet Description CASE CASE D (2) United Silicon Carbide, Inc offers the high-performance G3 SiC normally- on JFET transistors. This series exhibits ultra-low on resistance (R ) DS(ON) and gate charge (Q ) allowing for low conduction and switching loss. The G device normally-on characteristics with low R at V = 0 V is also DS(ON) GS G (1) ideal for current protection circuits without the need for active control, as well as for cascode operation. S (3) 1 2 3 Part Number Package Marking TO-247-3L UJ3N120070K3S UJ3N120070K3S Features Typical Applications Typical on-resistance R of 70m W w w DS(on),typ Over current protection circuits w Voltage controlled w DC-AC inverters w Maximum operating temperature of 175C w Switch mode power supplies Extremely fast switching not dependent on temperature w w Power factor correction modules w Low gate charge w Motor drives w w Low intrinsic capacitance Induction heating w RoHS compliant Maximum Ratings Parameter Test Conditions Value Symbol Units Drain-source voltage V 1200 V DS DC -20 to +3 V Gate-source voltage V GS (1) -20 to +20 AC T = 25C 33.5 A C (2) I Continuous drain current D T = 100C 24.5 C A (3) I T = 25C 85 Pulsed drain current C A DM T =25C Power dissipation P 254 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds (1) +20V AC rating applies for turn-on pulses <200ns applied with external R > 1 W. G (2) Limited by T J,max (3) Pulse width t limited by T p J,max 1 Rev. B, December 2018 For more information go to www.unitedsic.com. 70m W - 1200V SiC Normally-On JFET UJ3N120070K3S Datasheet Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max BV V = - 20V, I =1mA Drain-source breakdown voltage 1200 V DS GS D V = 1200V, DS 5 30 V = -20V, T = 25C GS J I Total drain leakage current mA D V = 1200V, DS 18 V = -20V, T = 175C GS J V =-20V, T =25C 5 50 GS j I Total gate leakage current mA G V =-20V, T =175C 20 GS j V =2V, I =10A, GS D 63 T = 25C J V =0V, I =10A, GS D 70 90 T = 25C J Drain-source on-resistance R mW DS(on) V =2V, I =10A, GS D 139 T = 175C J V =0V, I =10A, GS D 154 T = 175C J V = 5V, I = 35mA Gate threshold voltage V -14 -11.5 -6 V DS D G(th) Gate resistance R f = 1MHz, open drain 3.3 W G 2 Rev. B, December 2018 For more information go to www.unitedsic.com.