Product Technical OrOrdderer Folder Support NowNow InterFET VCR11N VCR11N Dual N-Channel Voltage Controlled Resistor JFET TO-71 Bottom View Features Source InterFET N0026S Geometry 5 Drain 6 Low Leakage: 10 pA Typical Low Input Capacitance: 6.0 pF Typical Gate 3 7 Gate High Input Impedance RoHS Compliant 2 Drain 1 SMT, TH, and Bare Die Package options. Source Applications SOIC8 Top View Small Signal Attenuators Filters Gate 1 8 Gate Amplifier Gain Control Drain 2 7 Source Oscillator Amplitude Control Source 3 6 Drain Gate 4 5 Gate Description The -25V InterFET VCR11N Voltage Controlled Resistor JFET are targeted for high input impedance applications. Gate leakages are less than 10pA at room temperatures. The resistance range of the VCR11N is 70 Ohms to 200 Ohms. The TO-71 package is hermetically sealed and suitable for military applications. Product Summary Parameters VCR11N Min Unit BV Gate to Source Breakdown Voltage -25 V GSS VGS(off) Gate to Source Cutoff Voltage -8 V r Drain to Source ON Resistance 70 ds(on) Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging VCR11N Through-Hole TO-71 Bulk SMPVCR11N Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMPVCR11NTR 13 Tape and Reel: Max 2500 Pieces SOIC8 Tape and Reel VCR11NCOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack VCR11NCFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35034.R00Product Technical OrOrdderer Folder Support NowNow InterFET VCR11N Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -15 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) VCR11N Parameters Conditions Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -25 V Breakdown Voltage Gate to Source IGSS VGS = -15V, VDS = 0V -0.2 nA Reverse Current Gate to Source V V = -10V, I = 1A -8 -12 V GS(OFF) DS D Cutoff Voltage r DS (MI N ) Static Drain to Source Min: V = 100mV, r = 200 0.95 1 DS DS1 - r DS (M AX) ON Resistance Ratio Max: VGS1 = VGS2, rDS2 = 2k 0.95 1 Dynamic Characteristics ( TA = 25C, Unless otherwise specified) VCR11N Parameters Conditions Min Max Unit Drain to Source I = 0A, V = 0V, D GS rds(on) 70 200 ON Resistance f = 1kHz Drain Gate VDG = 10V, IS = 0A, C 7.5 pF dg Capacitance f = 1MHz Source Gate VGS = 10V, ID = 0A, C 7.5 pF sg Capacitance f = 1MHz VCR11N 2 of 4 InterFET Corporation Document Number: IF35034.R00 www.InterFET.com December, 2018