Product Technical OrOrdderer Folder Support NowNow InterFET VCR3P VCR3P P-Channel Voltage Controlled Resistor JFET Features TO-18 Bottom View InterFET P0099F Geometry Drain 3 Low Leakage: 500pA Typical Low Input Capacitance: 18pF Typical Gate/Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Small Signal Attenuators SOT23 Top View Filters Amplifier Gain Control Source 1 Oscillator Amplitude Control Gate 3 Description Drain 2 The 15V InterFET VCR3P Voltage Controlled Resistor JFET is targeted for high input impedance applications. The resistance range of the VCR3P is TO-92 Bottom View 70 Ohms to 200 Ohms. The TO-18 package is hermetically sealed and suitable for military applications. Drain 3 Gate 2 Source 1 Product Summary Parameters VCR3P Min Unit BVGSS Gate to Source Breakdown Voltage 15 V V Gate to Source Cutoff Voltage 1 V GS(off) Drain to Source ON Resistance 70 rds(on) Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging VCR3P Through-Hole TO-18 Bulk PNVCR3P Through-Hole TO-92 Bulk SMPVCR3P Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPVCR3PTR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel VCR3PCOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack VCR3PCFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35092.R00Product Technical OrOrdderer Folder Support NowNow InterFET VCR3P Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 15 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) VCR3P Parameters Conditions Min Max Unit Gate to Source V(BR)GSS IG = 1A,VDS = 0V 15 V Breakdown Voltage Gate to Source IGSS VGS = 15V, VDS = 0V 20 nA Reverse Current Gate to Source V V = -10V, I = -1A 1 5 V GS(OFF) DS D Cutoff Voltage Dynamic Characteristics ( TA = 25C, Unless otherwise specified) VCR3P Parameters Conditions Min Max Unit Drain to Source ID = 0A, VGS = 0V, r 70 200 ds(on) ON Resistance f = 1kHz Drain Gate V = 10V, I = 0A, DG S Cdg 25 pF Capacitance f = 1MHz Source Gate VGS = 10V, ID = 0A, C 15 pF sg Capacitance f = 1MHz VCR3P 2 of 5 InterFET Corporation Document Number: IF35092.R00 www.InterFET.com December, 2018