STPSC8H065BY-TR STMicroelectronics

STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode Features A K AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature K K Recommended to PFC applications PPAP capable A K A V guaranteed from -40 to 175 C RRM A NC NC DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) DPAK HV DPAK ECOPACK 2 compliant component Applications Product label On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product status Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will STPSC8H065-Y boost performance in hard switching conditions. Product summary Symbol Value I 8 A F(AV) V 650 V RRM T 175 C j(max.) DS12495 - Rev 3 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office. STPSC8H065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to + 175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 145 C , DC Average forward current 8 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 75 I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 69 A FSM p c 420 t = 10 s square, T = 25 C p c (1) I T = 145 C , T = 175 C, = 0.1 Repetitive peak forward current 33 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit R Junction to case 1.3 1.6 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7 80 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 65 335 j T = 25 C - 1.45 1.65 j (2) V Forward voltage drop I = 8 A V F F T = 150 C - 1.7 2.05 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.972 x I + 0.135 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V 23.5 nC cj R V = 0 V, T = 25 C, F = 1 MHz 414 R c C Total capacitance pF j V = 400 V, T = 25 C, F = 1 MHz 38 R c 1. V R Most accurate value for the capacitive charge: Q V = C V dV c j R j 0 DS12495 - Rev 3 page 2/12