X-On Electronics has gained recognition as a prominent supplier of STPSC8H065BY-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC8H065BY-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC8H065BY-TR STMicroelectronics

STPSC8H065BY-TR electronic component of STMicroelectronics
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Part No.STPSC8H065BY-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
Datasheet: STPSC8H065BY-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.5013 ea
Line Total: USD 6.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 2.515
5000 : USD 2.5048
10000 : USD 2.4936
15000 : USD 2.4822
20000 : USD 2.4709
25000 : USD 2.4596
30000 : USD 2.4482
50000 : USD 2.4369
100000 : USD 2.4243

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 6.5013
10 : USD 2.3501
100 : USD 1.8878
500 : USD 1.5507
1000 : USD 1.2906
2500 : USD 1.2329

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC8H065BY-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC8H065BY-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode Features A K AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature K K Recommended to PFC applications PPAP capable A K A V guaranteed from -40 to 175 C RRM A NC NC DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) DPAK HV DPAK ECOPACK 2 compliant component Applications Product label On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product status Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will STPSC8H065-Y boost performance in hard switching conditions. Product summary Symbol Value I 8 A F(AV) V 650 V RRM T 175 C j(max.) DS12495 - Rev 3 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office. STPSC8H065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to + 175 C Repetitive peak reverse voltage 650 V RRM j I Forward rms current 22 A F(RMS) (1) I T = 145 C , DC Average forward current 8 A F(AV) c t = 10 ms sinusoidal, T = 25 C p c 75 I t = 10 ms sinusoidal, T = 125 C Surge non repetitive forward current 69 A FSM p c 420 t = 10 s square, T = 25 C p c (1) I T = 145 C , T = 175 C, = 0.1 Repetitive peak forward current 33 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit R Junction to case 1.3 1.6 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7 80 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 65 335 j T = 25 C - 1.45 1.65 j (2) V Forward voltage drop I = 8 A V F F T = 150 C - 1.7 2.05 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.972 x I + 0.135 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit (1) Q Total capacitive charge V = 400 V 23.5 nC cj R V = 0 V, T = 25 C, F = 1 MHz 414 R c C Total capacitance pF j V = 400 V, T = 25 C, F = 1 MHz 38 R c 1. V R Most accurate value for the capacitive charge: Q V = C V dV c j R j 0 DS12495 - Rev 3 page 2/12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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