X-On Electronics has gained recognition as a prominent supplier of STPSC8H065B-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPSC8H065B-TR Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPSC8H065B-TR STMicroelectronics

STPSC8H065B-TR electronic component of STMicroelectronics
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Part No.STPSC8H065B-TR
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 650 V 8A Schottky silicon carbide DPAK
Datasheet: STPSC8H065B-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9357 ea
Line Total: USD 1.94 
Availability - 651
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
651
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9357
10 : USD 1.9058
25 : USD 1.8746
100 : USD 1.8447
250 : USD 1.8148
500 : USD 1.7836

651
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 1
5 : USD 1.7287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Cd - Diode Capacitance
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPSC8H065B-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPSC8H065B-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPSC8H065 Datasheet 650 V, 8 A high surge silicon carbide power Schottky diode Features A K No reverse recovery charge in application current range K Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: A A Insulated voltage: 2500 V K RMS K TO-220AC TO-220AC insulated Typical package capacitance: 7 pF K Power efficient product K ECOPACK 2 compliant component A A NC NC Applications DPAK DPAK Switch mode power supply PFC DCDC converters LLC topologies Boost diode Description This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows Product status the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The STPSC8H065 minimal capacitive turn-off behavior is independent of temperature. This STPSC8H065 is especially suited for use in PFC applications. This ST SiC Product summary diode will boost the performance in hard switching conditions. Its high forward surge Symbol Value capability ensures a good robustness during transient phases. I F(AV) 8 A V 650 V RRM T 175 C j(max.) Product label DS9225 - Rev 8 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPSC8H065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) 2 (1) TO-220AC, DPAK, D PAK, T = 140 C , DC c I Average forward current 8 A F(AV) (1) TO-220AC Ins,T = 95 C c t = 10 ms sinusoidal, T = 25 C p c 75 Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 69 A FSM p c current t = 10 s square, T = 25 C 420 p c 2 (1) TO-220AC, DPAK, D PAK, T = 140 C , T = 175 C, = 0.1 c j I Repetitive peak forward current 33 A FRM (1) TO-220AC Ins,T = 95 C , T = 175 C, = 0.1 c j T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) 2. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit 2 TO-220AC, DPAK, D PAK 1.3 1.6 R Junction to case C/W th(j-c) TO-220AC Ins 2.45 3.8 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 7 80 j (1) I Reverse leakage current V = V A R RRM R T = 150 C - 65 335 j T = 25 C - 1.56 1.75 j (2) V I = 8 A Forward voltage drop V F F T = 150 C - 1.98 2.50 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.144 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS9225 - Rev 8 page 2/16

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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