STPSC6TH13TI STMicroelectronics

STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases Table 1. Device summary (per diode) Symbol Value I 6 A F(AV) V 650 V RRM T (max.) 175 C j Features No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: Capacitance: 7 pF Insulated voltage: 2500 V rms January 2016 DocID024696 Rev 3 1/8 This is information on a product in full production. www.st.com 8 ,QVXODWHG 72 %Characteristics STPSC6TH13TI 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified (per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) I Average forward current T = 100 C , DC current 6A F(AV) c t = 10 ms sinusoidal, T = 25 C 60 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 52 A FSM p c current t = 10 s sinusoidal, T = 25 C 400 p c (1) I Repetitive peak forward current T = 100 C , = 0.1 25 A FRM c T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) dPtot 1 --------------- -------------------------- 2. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistance Symbol Parameter Typ. Max. Unit Per diode 3.8 4.8 R Junction to case C/W th(j-c) Total 2.05 2.55 R Coupling 0.3 C/W th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -5 60 Reverse leakage j (1) I V = V A R R RRM current T = 150 C - 50 250 j T = 25 C - 1.56 1.75 j (2) V Forward voltage drop I = 6 A V F F T = 150 C - 1.98 2.5 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.192 x I F(AV) F (RMS) 2/8 DocID024696 Rev 3