MMBD914LT3G ON Semiconductor

MMBD914L Switching Diode, High Speed, 100 V Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS SOT23 CASE 318 Rating Symbol Value Unit STYLE 8 Reverse Voltage V 100 V R Forward Current I 200 mA F 3 1 NonRepetitive Peak Forward Surge Current I A FSM CATHODE ANODE t = 1 sec 1.0 t = 1 sec 2.0 MARKING DIAGRAM Peak Forward Surge Current I 500 mA FM(surge) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 5D M Total Device Dissipation P 225 mW D FR5 Board (Note 1) 1 T = 25C A Derate above 25C 1.8 mW/C 5D = Device Code Thermal Resistance, JunctiontoAmbient M = Date Code* R 556 C/W JA = PbFree Package Total Device Dissipation P 300 mW D (Note: Microdot may be in either location) Alumina Substrate (Note 2) *Date Code orientation and/or overbar may T = 25C A vary depending upon manufacturing location. Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient ORDERING INFORMATION R 417 C/W JA Junction and Storage Temperature Range T , T 55 to C Device Package Shipping J stg +150 MMBD914LT1G SOT23 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be SMMBD914LT1G SOT23 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel MMBD914LT3G SOT23 10,000 / (PbFree) Tape & Reel SMMBD914LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: January, 2019 Rev. 10 MMBD914LT1/DMMBD914L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) R Reverse Voltage Leakage Current I R (V = 20 Vdc) 25 nAdc R (V = 75 Vdc) 5.0 Adc R Diode Capacitance C 4.0 pF T (V = 0, f = 1.0 MHz) R Forward Voltage V 1.0 Vdc F (I = 10 mAdc) F Reverse Recovery Time t 4.0 ns rr (I = I = 10 mAdc) (Figure 1) F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 I F +10 V t t t r p 2.0 k 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2