1N4448W-13F Diodes Incorporated

1N4448W FAST SWITCHING SURFACE MOUNT DIODE Features Mechanical Data Fast Switching Speed Case: SOD123 Surface Mount Package Ideally Suited for Automated Insertion Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 For General Purpose Switching Applications Moisture Sensitivity: Level 1 per J-STD-020 High Conductance Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Polarity: Cathode Band Qualified to AEC-Q101 Standards for High Reliability Weight: 0.01 grams (approximate) SOD123 Top View Ordering Information (Note 4) Part Number Compliance Case Packaging 1N4448W-7-F Standard SOD123 3000/Tape & Reel 1N4448WQ-7-F Automotive SOD123 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 1N4448W Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 75 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current I 500 mA FM Average Rectified Output Current I 250 mA O Non-Repetitive Peak Forward Surge Current t = 1.0 s 4.0 I A FSM t = 1.0s 1.0 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 400 mW P D Thermal Resistance Junction to Ambient Air (Note 5) 315 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 75 V I = 10 A (BR)R R I = 5.0mA 0.62 F 0.72 0.855 I = 10mA F Forward Voltage V V FM 1.0 I = 100mA F 1.25 I = 150mA F V = 75V R 2.5 A 50 A V = 75V, T = +150C R J Peak Reverse Current (Note 6) I RM 30 A V = 25V, T = +150C R J 25 nA V = 20V R Total Capacitance 4.0 pF C V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time 4.0 ns t rr I = 0.1 x I , R = 100 rr R L Notes: 5. Part mounted on FR-4 PC board with 1 inch by 1 inch pad layout. 6. Short duration pulse test used to minimize self-heating effect. 1000 500 R = 315C/W 400 JA 100 T = 150C A 300 T = 125C A 10 T = 85C A 200 T = 25C A 1 100 T = -55C A 0 0.1 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1600 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (mV) A F Fig. 1 Power Derating Curve Figure 2 Typical Forward Characteristics 2 of 4 April 2014 1N4448W Diodes Incorporated www.diodes.com Document number: DS12002 Rev. 21 - 2 P , POWER DISSIPATION (mW) D I , INSTANTANEOUS FORWARD CURRENT (mA) F