MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultrafast switching circuits. Supplied in an inexpensive plastic package for lowcost, highvolume consumer requirements. Also available in Surface Mount package. Features www.onsemi.com Low Noise Figure 6.0 dB Typ 1.0 GHz SILICON SCHOTTKY Very Low Capacitance Less Than 1.0 pF BARRIER DIODES High Forward Conductance 0.5 V (Typ) I = 10 mA F These Devices are PbFree and are RoHS Compliant MARKING DIAGRAMS MAXIMUM RATINGS TO92 2Lead CASE 182 MBD Rating Symbol Value Unit STYLE 1 101 AYW Reverse Voltage V 7.0 V R 1 2 2 1 Forward Power Dissipation P F CATHODE ANODE T = 25C MBD101 280 mW A MMBD101LT1 225 Derate above 25C MBD101 2.2 mW/C MMBD101LT1 1.8 SOT23 (TO236) Junction Temperature T +150 C J 3 CASE 318 STYLE 8 Storage Temperature Range T 55 to +150 C stg 1 4M M Stresses exceeding those listed in the Maximum Ratings table may damage the 2 device. If any of these limits are exceeded, device functionality should not be 3 1 1 assumed, damage may occur and reliability may be affected. CATHODE ANODE (Pin 2 Not Connected) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A A = Assembly Location Characteristic Symbol Min Typ Max Unit Y = Year W = Work Week Reverse Breakdown Voltage V 7.0 10 V (BR)R 4M = Device Code (SOT23) (I = 10 A) R M = Date Code* Diode Capacitance C 0.88 1.0 pF D = PbFree Package (V = 0, f = 1.0 MHz, R (Note: Microdot may be in either location) Note 1, page 2) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Forward Voltage V 0.5 0.6 V F (I = 10 mA) F ORDERING INFORMATION Reverse Leakage I 0.02 0.25 A R Device Package Shipping (V = 3.0 V) R MBD101G TO92 5000 Units / Box Product parametric performance is indicated in the Electrical Characteristics for (PbFree) the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different MMBD101LT1G SOT23 3000 / Tape & Reel conditions. (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 4 MBD101/DMBD101G, MMBD101LT1G TYPICAL CHARACTERISTICS (T = 25C unless noted) A 1.0 100 0.7 0.5 T = 85C V = 3.0 V A R 10 0.2 0.1 T = -40C A 0.07 0.05 1.0 T = 25C A 0.02 0.1 0.01 30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 T , AMBIENT TEMPERATURE (C) V , FORWARD VOLTAGE (VOLTS) A F Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) 9.0 0.9 8.0 7.0 0.8 6.0 5.0 4.0 0.7 3.0 2.0 1.0 0.6 0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 V , REVERSE VOLTAGE (VOLTS) P , LOCAL OSCILLATOR POWER (mW) R LO Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS LOCAL OSCILLATOR Note 1 C is measured using a capacitance bridge (Boonton D Electronics Model 75A or equivalent). Note 2 Noise figure measured with diode under test in tuned UHF DIODE IN diode mount using UHF noise source and local oscillator NOISE SOURCE TUNED (LO) frequency of 1.0 GHz. The LO power is adjusted H.P. 349A MOUNT for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 L is measured on a package having a short instead of a S NOISE IF AMPLIFIER die, using an impedance bridge (Boonton Radio Model FIGURE METER NF = 1.5 dB 250A RX Meter). H.P. 342A f = 30 MHz Figure 5. Noise Figure Test Circuit www.onsemi.com 2 I , REVERSE LEAKAGE ( A) C , CAPACITANCE (pF) R D NF, NOISE FIGURE (dB) I , FORWARD CURRENT (mA) F