Small Signal Diodes MMBD1201 - MMBD1205 Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Note 1, Note 2) Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit CONNECTION DIAGRAM V Maximum Repetitive Reverse 100 V RRM Voltage 3 3 1201 1202 I Average Rectified Forward Current 200 mA F(AV) I NonRepetitive Peak Pulse Width = 1.0 A FSM 1 2 Forward Surge 1.0 s 3 3 1203 1204 Current Pulse Width = 2.0 1.0 s T Storage Temperature Range 55 to + 150 C 1221 STG 3 1205 T Operating Junction Temperature 150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 2 assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. THERMAL CHARACTERISTICS SOT23 Values are at T = 25C unless otherwise noted. A CASE 31808 Symbol Parameter Value Unit P Power Dissipation 350 mW D MARKING DIAGRAM Derate Above 25C 2.8 mW/C R Thermal Resistance, 357 C/W 2xM JA JunctiontoAmbient 2x = Specific Device Code x = 4, 5, 6, 7, 8 M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMBD1201, SOT23 3000 / (PbFree Tape & Reel MMBD1202, Halide Free) MMBD1203, MMBD1204, MMBD1205 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: July, 2021 Rev. 3 MMBD1202/DMMBD1201 MMBD1205 ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit V Breakdown Voltage I = 100 A 100 V R R V Forward Voltage I = 1.0 mA 550 600 mV F F I = 10 mA 660 740 mV F I = 100 mA 820 920 mV F I = 200 mA 0.87 1.0 V F I = 300 mA 1.1 V F I Reverse Current V = 20 V 25 nA R R V = 50 V 50 nA R V = 50 V, T = 150C 100 A R A C Total Capacitance V = 0 V, f = 1.0 MHz 2.0 pF T R t Reverse Recovery Time I = I = 10 mA, I = 1.0 mA, 4.0 ns rr F R RR R = 100 L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL PERFORMANCE CHARACTERISTICS 150 T = 25C T = 25C A A 300 250 140 200 130 150 100 120 50 0 110 12 3 5 10 20 30 50 100 10 20 30 50 70 100 V , Reverse Voltage (V) I , Reverse Current ( A) R R Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage V I = 1.0 to 100 A I V = 10 to 100 V R R R R www.onsemi.com 2 V , Reverse Voltage (V) R I , Reverse Current (nA) R