Product Information

STTH3010GY-TR

STTH3010GY-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Diodes - General Purpose, Power, Switching Ultrafast Recovery 30A 1000V 1.30VF
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.6475 ea
Line Total: USD 4.65

31 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
31 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STTH3010GY-TR
STMicroelectronics

1 : USD 4.6475
10 : USD 4.0981
30 : USD 3.6254
100 : USD 3.2946
500 : USD 3.1431
1000 : USD 3.0741

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Package / Case
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STTH3010-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q101 qualified A K Ultrafast soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability NC High junction temperature 2 D PAK STTH3010GY ECOPACK 2 compliant component (STTH3010WY) Description A The high quality design of this diode has K produced a device with low leakage current, DO-247 regularly reproducible characteristics and intrinsic STTH3010WY ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Table 1. Device summary The improved performance in low leakage current, and therefore thermal runaway guard I 30 A F(AV) band, is an immediate competitive advantage for V 1000 V RRM this device. T 175 C j V (typ) 1.30 V F t (typ) 42 ns rr June 2012 Doc ID 018923 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH3010-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 50 A F(RMS) DO-247 T = 105 C c I Average forward current, = 0.5 30 A F(AV) 2 D PAK T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit DO-247 R Junction to case 1.1 C/W th(j-c) 2 D PAK Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/9 Doc ID 018923 Rev 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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