STTH3010GY-TR STMicroelectronics

STTH3010-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q101 qualified A K Ultrafast soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability NC High junction temperature 2 D PAK STTH3010GY ECOPACK 2 compliant component (STTH3010WY) Description A The high quality design of this diode has K produced a device with low leakage current, DO-247 regularly reproducible characteristics and intrinsic STTH3010WY ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Table 1. Device summary The improved performance in low leakage current, and therefore thermal runaway guard I 30 A F(AV) band, is an immediate competitive advantage for V 1000 V RRM this device. T 175 C j V (typ) 1.30 V F t (typ) 42 ns rr June 2012 Doc ID 018923 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH3010-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 50 A F(RMS) DO-247 T = 105 C c I Average forward current, = 0.5 30 A F(AV) 2 D PAK T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit DO-247 R Junction to case 1.1 C/W th(j-c) 2 D PAK Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/9 Doc ID 018923 Rev 1