V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per 3 3 2 2 1 JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA V20150C VF20150C 1 package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance PIN 3 CASE PIN 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 MECHANICAL DATA 3 2 2 VB20150C VI20150C 1 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and PIN 1 PIN 1 K PIN 2 TO-262AA K PIN 2 HEATSINK PIN 3 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started DESIGN SUPPORT TOOLS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Models E3 suffix meets JESD 201 class 1A whisker test Available Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 2 x 10 A F(AV) V 150 V RRM I 120 A FSM V at I = 10 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20150C VF20150C VB20150C VI20150C UNIT Maximum repetitive peak reverse voltage V 150 V RRM per device 20 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed 120 A I FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 70 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C per p J I 0.5 A RRM diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89046 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 150 (minimum) -V R A BR I = 5 A 0.79 - F T = 25 C A I = 10 A 1.05 1.20 Instantaneous forward voltage F V V F (1) per diode I = 5 A 0.59 - F T = 125 C A I = 10 A 0.69 0.75 F T = 25 C 1.3 - A A V = 100 V R T = 125 C 1.2 - mA A (2) Reverse current per diode I R T = 25 C - 150 A A V = 150 V R T = 125 C 315 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20150C VF20150C VB20150C VI20150C UNIT Typical thermal resistance per diode R 2.8 5.0 2.8 2.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20150C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20150C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20150C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20150C-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 10 D = 0.8 Resistive or Inductive Load D = 0.5 V(B,I)20150C D = 0.3 20 8 D = 0.2 VF20150C 15 6 D = 1.0 D = 0.1 10 4 T 5 2 D = t /T t Mounted on Specific Heatsink p p 0 0 02 4 6 8 10 12 0 25 50 75 100 125 150 175 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89046 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)