VF20150C-M3/4W Vishay

VF20150C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 VF20150C TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and PIN 3 reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 10 A F(AV) Case: ITO-220AB V 150 V RRM Molding compound meets UL 94 V-0 flammability rating I 120 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade V at I = 10 A 0.69 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package ITO-220AB M3 suffix meets JESD 201 class 1A whisker test Diode variation Dual common cathode Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VF20150C UNIT Maximum repetitive peak reverse voltage V 150 V RRM per device 20 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load Voltage rating of change (rated V ) dV/dt 10 000 V/s R Isolation voltage from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 05-Mar-18 Document Number: 89328 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VF20150C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.79 - F T = 25 C A I = 10 A 1.05 1.20 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.59 - F T = 125 C A I = 10 A 0.69 0.75 F T = 25 C 1.3 - A A V = 100 V R T = 125 C 1.2 - mA A (2) Reverse current per diode I R T = 25 C - 150 A A V = 150 V R T = 125 C 3 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VF20150CUNIT Typical thermal resistance per diode R 5.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VF20150C-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 10 Resistive or Inductive Load D = 0.8 D = 0.5 D = 0.3 20 8 D = 0.2 15 6 D = 1.0 D = 0.1 10 4 T 5 2 D = t /T t p p Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 02 4 6 8 10 12 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 05-Mar-18 Document Number: 89328 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)